Highly-performant 38 nm SON (silicon-on-nothing) P-MOSFETs with 9 nm-thick channels

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 20-22

  Monfray, S ^a,b   Skotnicki, Thomas ^a   Morand, Y ^a   Descombes, S ^a   Talbot, A ^a   Dutartre, D ^a   Leverd, F ^a   Le Friec, Y ^a   Palla, R ^a   Pantel, R ^a   Haond, M ^a   Nier, M E ^a   Vizioz, C ^c   Louis, D ^c  

^a STMICROELECTRONICS   (France)

^b ORANGE LABS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS; SILICON WAFERS; THIN FILMS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

SILICON-ON-NOTHING (SON) PROCESS;

MOSFET DEVICES;

EID: 0036454453     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044400     Document Type: Conference Paper

References (7)

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