-
1
-
-
0031380617
-
2D high-brightness laser diode arrays
-
San Francisco, CA
-
A. Schoenfelder, M. Staskus, M. Carico, S. D. DeMars, and R. J. Lang, "2D high-brightness laser diode arrays," in Proc. LEOS '97, San Francisco, CA, 1997, pp. 480-481.
-
(1997)
Proc. LEOS '97
, pp. 480-481
-
-
Schoenfelder, A.1
Staskus, M.2
Carico, M.3
DeMars, S.D.4
Lang, R.J.5
-
2
-
-
0031551211
-
155 W CW optical power from 1 cm mono-lithic AlGaAs/InGaAs laser diode array
-
X. He, M. Ung, S. Srinivasan, and R. Patel, "155 W CW optical power from 1 cm mono-lithic AlGaAs/InGaAs laser diode array," Electron. Lett., vol. 33, pp. 1221-1222, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 1221-1222
-
-
He, X.1
Ung, M.2
Srinivasan, S.3
Patel, R.4
-
3
-
-
0344281322
-
-
USA, June
-
Coherent Inc., USA, Laser Focus World, p. 13, June 1998.
-
(1998)
Laser Focus World
, pp. 13
-
-
-
4
-
-
0004156385
-
-
Mainz, Germany
-
DILAS Diodenlaser Inc., Mainz, Germany, Product Catalog, 1998.
-
(1998)
Product Catalog
-
-
-
5
-
-
0027607334
-
High-power, strained-layer amplifiers and lasers with tapered gain regions
-
E. S. Kintzer, J. N. Walpole, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power, strained-layer amplifiers and lasers with tapered gain regions," IEEE Photon. Technol. Lett., vol. 5, pp. 605-608, 1993.
-
(1993)
IEEE Photon. Technol. Lett.
, vol.5
, pp. 605-608
-
-
Kintzer, E.S.1
Walpole, J.N.2
Chinn, S.R.3
Wang, C.A.4
Missaggia, L.J.5
-
6
-
-
0031233123
-
5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm
-
S. E. O' Brian, A. Schönfelder, and R. J. Lang, "5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm," IEEE Photon. Technol. Lett., vol. 9, pp. 1217-1219, 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 1217-1219
-
-
O'Brian, S.E.1
Schönfelder, A.2
Lang, R.J.3
-
7
-
-
0032074081
-
Tapered laser arrays for high power operation (>1.4 W CW) at 1.59 μm for applications in surgery
-
P. J. Williams, J. J. Lewandowski, D. J. Robbins, A. K. Wood, F. O. Robson, and B. K. Nayar, "Tapered laser arrays for high power operation (>1.4 W CW) at 1.59 μm for applications in surgery," Electron. Lett., vol. 34, pp. 993-994, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 993-994
-
-
Williams, P.J.1
Lewandowski, J.J.2
Robbins, D.J.3
Wood, A.K.4
Robson, F.O.5
Nayar, B.K.6
-
8
-
-
0028524951
-
High-power, spectrally coherent array of monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA's)
-
J. S. Osinsky, D. Mehuys, D. F. Welch, K. M. Dzurko, and R. J. Lang, "High-power, spectrally coherent array of monolithic flared amplifier-master oscillator power amplifier (MFA-MOPA's)," IEEE Photon. Technol. Lett., vol. 6, pp. 1185-1187, 1994.
-
(1994)
IEEE Photon. Technol. Lett.
, vol.6
, pp. 1185-1187
-
-
Osinsky, J.S.1
Mehuys, D.2
Welch, D.F.3
Dzurko, K.M.4
Lang, R.J.5
-
9
-
-
0032223958
-
Improved beam quality for high-power tapered laser diodes with LMG (low modal gain)-epitaxial layer structures
-
San Jose, CA
-
M. Mikulla, A. Schmitt, P. Chazan, A. Wetzel, M. Walther, R. Kiefer, W. Pletschen, J. Braunstein, and G. Weimann, "Improved beam quality for high-power tapered laser diodes with LMG (low modal gain)-epitaxial layer structures," in Proc. Photonics West, San Jose, CA, 1998, pp. 72-79.
-
(1998)
Proc. Photonics West
, pp. 72-79
-
-
Mikulla, M.1
Schmitt, A.2
Chazan, P.3
Wetzel, A.4
Walther, M.5
Kiefer, R.6
Pletschen, W.7
Braunstein, J.8
Weimann, G.9
-
10
-
-
0032069347
-
High-brightness tapered semiconductor laser-oscillators and -amplifiers with low modal gain epilayer-structures
-
M. Mikulla, P. Chazan, A. Schmitt, S. Morgott, A. Wetzel, M. Walther, R. Kiefer, W. Pletschen, J. Braunstein, and G. Weimann, "High-brightness tapered semiconductor laser-oscillators and -amplifiers with low modal gain epilayer-structures," IEEE Photon. Technol. Lett., vol. 10, pp. 654-656, 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 654-656
-
-
Mikulla, M.1
Chazan, P.2
Schmitt, A.3
Morgott, S.4
Wetzel, A.5
Walther, M.6
Kiefer, R.7
Pletschen, W.8
Braunstein, J.9
Weimann, G.10
-
11
-
-
0031386097
-
Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers
-
San Francisco, CA
-
P. Chazan, S. Morgott, M. Mikulla, R. Kiefer, G. Bihlmann, R. Moritz, J. Daleiden, J. Braunstein, and G. Weimann, "Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers," in Proc. LEOS '97, San Francisco, CA, 1997, pp. 411-412.
-
(1997)
Proc. LEOS '97
, pp. 411-412
-
-
Chazan, P.1
Morgott, S.2
Mikulla, M.3
Kiefer, R.4
Bihlmann, G.5
Moritz, R.6
Daleiden, J.7
Braunstein, J.8
Weimann, G.9
-
12
-
-
0027615214
-
High-power, near-diffraction limited large area traveling-wave semiconductor amplifiers
-
L. Goldberg, D. Mehuys, M. R. Surette, and D. C. Hall, "High-power, near-diffraction limited large area traveling-wave semiconductor amplifiers," IEEE J. Quantum Electron., vol. 29, pp. 2028-2043, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 2028-2043
-
-
Goldberg, L.1
Mehuys, D.2
Surette, M.R.3
Hall, D.C.4
|