Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities

Journal of Applied Physics

Volumn 89, Issue 1, 2001, Pages 61-65

  Satoh, M ^a   Nakaike, Y ^a   Kuriyama, K ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011684477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330241     Document Type: Article

References (16)

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