Assist feature OPC implementation for the 130 nm technology node with KrF and No forbidden pitches

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 1139-1147

  Word, James ^a   Zhu, Suihua ^a   Sturtevant, John ^a  

^a Integrated Device Technology   (United States)

Author keywords

Assist Bar; OPC; RET; Scatter Bar

Indexed keywords

GATES (TRANSISTOR); MANUFACTURE; MASKS; OPTIMIZATION;

RESOLUTION ENHANCEMENT TECHNOLOGY (RET);

LITHOGRAPHY;

EID: 0036414993     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474494     Document Type: Conference Paper

References (5)

1. J.F. Chen, T. Laidig, K.E. Wampler, R. Caldwell, "Full-chip Optical Proximity Correction with Depth of Focus Enhancement," Microlithography World, Volume 6, Number 3, Summer 1997.
2. J. Finders, J. van Schoot, M. Mulder, A. Hunter, "DUV Lithography (KrF) for 130nm Using Off-Axis Illumination And Assisting Features," Semicon Japan, December 1999.
3. J. Brace, M. Cross, L. Liebmann, S. Mansfield, A. McGuire, "Assist Features - Challenges and Opportunities", Arch Microlithography Symposium, 2000.
4. J.S. Peterson, "Analytical Description of Anti-Scattering Bar Assist Features," vol. 4000, SPIE 2000.
5. L. Liebmann, J. Brace, W. Chu, M. Cross, I. Graur, J. Krueger, W. Leipold, S. Mansfield, E. McGuire, D. Sundling, "Optimizing Style Oprions for Sub-Resolution Assist Features", vol. 4346, SPIE 2001.