Mechanical spectroscopy connected to creep and stress relaxation in a high resistant silicon nitride

Journal of the European Ceramic Society

Volumn 22, Issue 14-15, 2002, Pages 2511-2516

  Testu, S ^a   Schaller, R ^a   Besson, J L ^b   Rouxel, T ^c   Bernard Granger, G ^d  

^a EPFL   (Switzerland)

^b UNIVERSITY OF LIMOGES   (France)

^c UNIVERSITÉ DE RENNES 1   (France)

^d SAINT GOBAIN RECHERCHE   (France)

Author keywords

Creep; Grain boundaries; Mechanical spectroscopy; Si3N4; Sintering

Indexed keywords

ANNEALING; GLASS TRANSITION; QUENCHING; RELAXATION PROCESSES; SINTERING;

CREEP RATE;

SILICON NITRIDE;

CREEP; GRAIN BOUNDARY; SILICON NITRIDE; SPECTROSCOPY; STRESS;

EID: 0036391527     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(02)00109-7     Document Type: Article

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