Grain-boundary relaxation in high-purity silicon nitride

Journal of the American Ceramic Society

Volumn 79, Issue 9, 1996, Pages 2237-2246

  Pezzotti, Giuseppe ^a,d,e   Ota, Ken'ichi ^b   Kleebe, Hans Joachim ^c,e  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c UNIVERSITY OF BAYREUTH   (Germany)

^d KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^e AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CREEP; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; INTERNAL FRICTION; MATHEMATICAL MODELS; SILICA; STRAIN MEASUREMENT; STRESS RELAXATION; TORSIONAL STRESS; VISCOSITY;

ARRHENIUS PLOT; CREEP PLASTIC STRAIN; GRAIN BOUNDARY RELAXATION; SHEAR MODULUS RELAXATION; SLIDING MECHANISM; STATIC LOAD CONDITIONS; TORSIONAL PENDULUM APPARATUS; TORSIONAL STRAIN MEASUREMENTS;

SILICON NITRIDE;

EID: 0030241955     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1996.tb08968.x     Document Type: Article

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