Photoluminescence of Zn-doped GaN grown by HVPE

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 35-40

  Reshchikov, M A ^a   Huang, D ^a   Morkoc H ^a   Molnar, R J ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; EXCITONS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; VAPOR PHASE EPITAXY; ZINC;

DEFECT-RELATED REGION; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 0036375739     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)