Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 75-79

  Jayanarayanan, Sankaran ^a   Prins, Freek ^a   Chen, Xiangdong ^a   Banerjee, Sanjay ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; HOLE MOBILITY; LITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; STRAIN; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

ULTRAHIGH VACUUM CHAMICAL VAPOR DEPOSITION (UHVCVD);

MOSFET DEVICES;

EID: 0036349380     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. CMOS scaling into the nanometer regime
2. SiGe band engineering for MOS, CMOS and quantum effect devices
3. Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys
4. SiGe-Channel heterojunction p-MOSFET's
5. x/ Si vertical PMOSFET fabricated by Ge ion implantation