Characterization of ultra-shallow implants using low-energy secondary ion mass spectrometry: Surface roughening under cesium bombardment

Fujitsu Scientific and Technical Journal

Volumn 38, Issue 1, 2002, Pages 69-74

  Kataoka, Yuji ^a   Shigeno, Mayumi ^a   Tada, Yoko ^a   Yamazaki, Kazutoshi ^a   Kase, Masataka ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS;

ULTRA-SHALLOW IMPLANTS;

ION IMPLANTATION;

EID: 0036324160     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Sources of error in quantitative depth profiling of shallow doping distributions by secondaryion-mass spectrometry in combination with oxygen flooding
2. 2+bombardment with oxygen flooding
3. Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate
4. Native oxide effect on ultra-shallow arsenic profile in silicon
5. Ranges and range theories
6. 2 formation in silicon bombarded with oxygen above the critical angle for beam-induced oxidation: New evidence from sputtering yield ratios and correlation with data obtained by other techniques