Dual bias feed SiGe HBT low noise linear amplifier

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 227-230

  Taniguchi, E ^a   Maeda, K ^a   Ikushima, T ^a   Sadahiro, K ^a   Itoh, K ^a   Suematsu, N ^a   Takagi, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

DUAL BIAS FEED CIRCUIT; LOW NOISE AMPLIFIER; SILICON GERMANIUM;

AMPLIFIERS (ELECTRONIC);

EID: 0034869322     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Intermodulation distortion of low noise silicon BJT and MOSFET fabricated in BiCMOS process
2. Low cost 900MHz single-chip cordless telephone receiver
3. A highly integrated radio for high performance, low cost 2.4GHz ISM cordless applications
4. A highly integrated dual-band tri-mode transceiver chipset for CDMA TIAEIA-95 and AMPS applications
5. A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology