A wided dynamic range switched-LNA in SiGe BiCMOS

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 223-226

  Naktani, T ^a   Itoh, J ^a   Imanishi, I ^a   Ishikawa, O ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; GAIN MEASUREMENT; INSERTION LOSSES; MOSFET DEVICES; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING NETWORKS;

BICMOS TECHNOLOGY; SILICON GERMANIUM; SUBSTRATE EFFECT; SWITCHED-LOW NOISE AMPLIFIER;

AMPLIFIERS (ELECTRONIC);

EID: 0034878185     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A new design approach for variable-gain low noise amplifiers
2. A miniature PHEMT switched-LNA for 800 MHz to 8.0 GHz handset applications
3. A high performance switched-LNA IC for CDMA handset receiver applications
4. RF system issues related to CDMA receiver specifications