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Volumn , Issue , 1995, Pages 57-58
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Sub-quarter micron titanium salicide technology with in-situ silicidation using high-temperature sputtering
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
CRYSTAL STRUCTURE;
GATES (TRANSISTOR);
IMPURITIES;
LEAKAGE CURRENTS;
PHASE TRANSITIONS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SPUTTER DEPOSITION;
TITANIUM COMPOUNDS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
ARSENIC IMPLANT;
CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
HIGH TEMPERATURE SPUTTERING;
IN SITU SILICIDATION TECHNIQUE;
ION BEAM MIXING;
SHEET RESISTANCE;
THERMAL ACTIVATION;
TITANIUM SALICIDE TECHNOLOGY;
WET ETCHING;
ULSI CIRCUITS;
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EID: 0029482954
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (25)
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References (7)
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