Photoluminescence and photocapacitance of Se vapor-pressure-dependent deep levels in Ga-diffused layers formed in p-type ZnSe substrates

Journal of the Electrochemical Society

Volumn 149, Issue 1, 2002, Pages

  Sakurai, Fumitoshi ^a,b   Suto, Ken ^a,b,c   Sanda, Seishi ^c   Nishizawa, Jun Ichi ^a,b  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL IMPURITIES; DIFFUSION; PHOTOLUMINESCENCE; SUBSTRATES; VAPOR PRESSURE;

PHOTOCAPACITANCE;

ZINC COMPOUNDS;

EID: 0036226179     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1426403     Document Type: Article

References (12)