Liquid phase epitaxial p-type ZnSe growth from a Se solution and fabrication of pn junctions with diffused n-type layers

Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 75-82

  Sakurai, Fumitoshi ^a   Motozawa, Mitsutake ^b   Suto, Ken ^b   Nishizawa, Jun Ichi ^b  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; LUMINESCENCE; SEMICONDUCTING SELENIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SURFACES; VAPOR PRESSURE;

EPITAXIAL LAYERS; HOLE CONCENTRATION; SHALLOW ACCEPTORS; TEMPERATURE DIFFERENCE METHOD;

LIQUID PHASE EPITAXY;

EID: 0031546792     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00724-5     Document Type: Article

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