Se and Zn vapor pressure control in ZnSe single crystal growth by the sublimation method

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 675-682

  Tamura, Hitoshi ^a   Suto, Ken ^a,b   Nishizawa, Jun Ichi ^a,c  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EMISSION SPECTROSCOPY; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PRESSURE CONTROL; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; SUBLIMATION; VAPOR PRESSURE; X RAY ANALYSIS;

Z RAY ROCKING CURVES; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033881896     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00520-5     Document Type: Article

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