A new model for enhancement-mode power pHEMT

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 1 I, 2002, Pages 57-61

  Wei, Ce Jun ^a,b   Tkachenko, Yevgeniy A ^a,b   Bartle, Dylan ^a,b  

^a IEEE   (United States)

^b Alpha Industries Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER-ADDED EFFICIENCY (PAE);

COMPUTER SIMULATION; HARMONIC ANALYSIS; MATHEMATICAL MODELS; MESFET DEVICES; OPTIMIZATION; WIRELESS TELECOMMUNICATION SYSTEMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036208253     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.981246     Document Type: Article

References (6)

1. Enhancement mode PHEMT for single supply high efficiency power amplifiers
2. A realistic large-signal MESFET model for SPICE
3. An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating
4. Multiharmonic load termination effects on GaAs MESFET power amplifiers
5. Scalable small-signal MESFET/PHEMT models up to 30 mm periphery