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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2001, Pages 6226-6230

Effect of thermal annealing on band edge adsorption spectrum of arsenic-ion-implanted GaAs

(8) Nagai, Yasuyuki a Kunimoto, Takashi a,e Nagasaka, Keigo a Nojiri, Hiroyuki b,f Motokawa, Mitsuhiro b Matsukura, Fumihiro c Dietl, Tomasz d Ohno, Hideo c

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b TOHOKU UNIVERSITY (Japan)

c TOHOKU UNIVERSITY (Japan)

d INSTITUTE OF PHYSICS (Poland)

e TOTTORI UNIVERSITY (Japan)

f OKAYAMA UNIVERSITY (Japan)

Author keywords

Absorption; Arsenic ion implanted; Band gap energy; Defect level; GaAs:As+; Thermal annealing

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ARSENIC; CALCULATIONS; DEFECTS; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PHOTONS; POSITIVE IONS; RAPID THERMAL ANNEALING;

ABSORPTION COEFFICIENT; ARSENIC ION IMPLANTED GALLIUM ARSENIDE; BAND EDGE ABSORPTION SPECTRUM; NEAR BAND GAP TRANSMITTANCE; PHOTON ENERGY; SHALLOW LEVEL DEFECTS; THERMAL ANNEALING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036150469 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (3)

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