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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 2, 2002, Pages 241091-241097

Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation

(4) Dhar, S a Milosavljevic, M a Bibic, N a Lieb, K P a

a UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INERT GAS; SILICON; TANTALUM;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL REACTION; ENERGY; IRRADIATION; MODEL; REACTION ANALYSIS; SEMICONDUCTOR; SPECTROSCOPY; X RAY DIFFRACTION;

EID: 0036140623 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.