Effect of high-temperature electron irradiation on the formation of radiative defects in silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 528-531

  Buyanova, I A ^a   Hallberg, T ^b   Murin, L I ^c   Markevich, V P ^c   Monemar, B ^a   Lindstrom J L ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRON IRRADIATION; ELECTRONIC STRUCTURE; EXCITONS; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SPECTROSCOPY;

PHOTOLUMINESCENCE SPECTROSCOPY;

SILICON WAFERS;

EID: 0033324361     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00564-5     Document Type: Article

References (8)

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8. J.L. Lindström, T. Hallberg, L.I. Murin, V.P. Markevich, unpublished.