Growth of Cd(1-x)ZnxTe epitaxial layers by isothermal closed space sublimation

Journal of Crystal Growth

Volumn 234, Issue 2-3, 2002, Pages 311-317

  Tobenas S ^a   Larramendi, E M ^a   Puron E ^a   De Melo, O ^a   Cruz Gandarilla, F ^b   Hesiquio Garduno M ^b   Tamura, M ^c  

^a UNIVERSITY OF HAVANA   (Cuba)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

A3. Vapor phase epitaxy; B1. Alloys; B2. Semiconducting II VI materials

Indexed keywords

ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; STRUCTURE (COMPOSITION); SUBLIMATION; SUBSTRATES;

MOLAR FRACTIONS;

EPITAXIAL GROWTH;

EID: 0036131602     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01710-9     Document Type: Article

References (16)