Ultrahigh vacuum atomic layer epitaxy of Cd1-xMnxTe layers grown on ZnTe/GaAs(100) substrates: Reflection mass spectrometry studies

Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 266-270

  Sadowski, J T ^a   Herman, M A ^a,b  

^a INSTITUTE OF VACUUM TECHNOLOGY   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Atomic layer epitaxy; Reflection mass spectrometry; Thin film growth in ultrahigh vacuum

Indexed keywords

FILM GROWTH; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS;

REFLECTION MASS SPECTROMETRY (REMS); SURFACE RECONSTRUCTION; ULTRAHIGH VACUUM ATOMIC LAYER EPITAXY;

SEMICONDUCTING FILMS;

EID: 0031220818     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00236-8     Document Type: Article

References (10)

1. M.A. Herman, Applied Surface Science 112 (1997), 1 Proceedings of the ALE-4 Intern. Confer., Linz, 1996.
2. M.A. Herman, Applied Surface Science 112 (1997), 1 Proceedings of the ALE-4 Intern. Confer., Linz, 1996.
3. T. Suntola, Thin Solid Films 216 (1992) 84.
4. M.A. Herman, Vacuum 42 (1991) 61.
5. M.A. Herman, O. Jylhä, M. Pessa, J. Cryst. Growth 66 (1984) 480.
6. M. Pessa, O. Jylhä, Appl. Phys. Lett. 45 (1984) 646.
7. J.T. Sadowski, M.A. Herman, Applied Surface Science 112 (1997) 148 Proceedings of the ALE-4 Intern. Confer., Linz, 1996.
8. J.T. Sadowski, M.A. Herman, Applied Surface Science 112 (1997) 148 Proceedings of the ALE-4 Intern. Confer., Linz, 1996.
9. M.A. Herman, H. Sitter, Molecular Beam Epitaxy - Fundamentals and Current Status, 2nd edn., Springer, Berlin, 1996.
10. P. Juza, H. Sitter, M.A. Herman, Appl. Phys. Lett. 53 (15) (1988) 1396.