A 44 mm2 4-bank 8-word page read 64 Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 102-103+449+99

  Tanzawa, T ^a   Umezawa, A ^a   Taura, T ^a   Shiga, H ^a   Hara, T ^a   Takano, Y ^a   Miyaba, T ^a   Tokiwa, N ^a   Watanabe, K ^a   Watanabe, H ^a   Masuda, K ^a   Naruke, K ^a   Kato, H ^a   Atsumi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CODES (SYMBOLS); COMPUTER PROGRAMMING; DECODING; ELECTRIC POTENTIAL; ELECTRIC SWITCHES; MICROPROCESSOR CHIPS; REDUNDANCY; VOLTAGE CONTROL;

VOLTAGE CONTROLLER; VOLTAGE SWITCHES;

FLASH MEMORY;

EID: 0036110797     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A 1.8 V 64 Mb 100 MHz flexible read while write flash memory
2. 2 Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application
3. A channel-erasing 1.8 V-only 32 Mb NOR flash EEPROM with a bit-line direct-sensing scheme
4. Advanced flash memory technology and trends for file storage application
5. A 0.5 μm 3 V 1T1C 1 Mb FRAM with a variable reference bitline voltage scheme using a fatigue-free reference capacitor