Empirical model for fatigue of PZT ferroelectric memories

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 39-44

  Rodriguez, J ^a   McPherson, J ^a   Moise, T ^a   Summerfelt, S ^a   Aggarwal, S ^a   Udayakumar, K R ^a   Gilbert, S ^a   Dunn, C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FATIGUE TESTING; POLARIZATION; THIN FILMS;

SWITCHED POLARIZATION FATIGUE;

PIEZOELECTRIC MATERIALS;

EID: 0036084677     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Electrical properties of submicron.13um Ir/PZT/Ir capacitors formed on tungsten plugs
2. Progress towards embedded ferroelectric memories
3. Polarization as a driving force in accelerated data retention measurements on ferroelectric thin films
4. Rochelle salt as a dielectric
5. 2 1T1C COB cell for high density FRAM
6. FRAM reliability
7. Reliability studies for robust FeRAMs with low voltage operation
8. Reliability of MOCVD Pb(Zr,Ti)O3 (<70 nm) thin film capacitors with Ir and IrOx electrodes for low voltage FeRAM
9. Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features