Measurement and modelling of static and dynamic breakdowns of power GaInP/GaAs HBTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1001-1004

  Heckmann, Sylvain ^a   Nébus, Jean Michel ^a   Quéré, Raymond ^a   Jacquet, Jean Claude ^b   Floriot, Didier ^b   Auxemery, Philippe ^c  

^a UNIVERSITY OF LIMOGES   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; ELECTRIC NETWORK TOPOLOGY; ELECTRONS; IONIZATION; NONLINEAR NETWORKS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

DYNAMIC BREAKDOWN PHENOMENA; GALLIUM ARSENIDE HETEROJUNCTION BIPOLAR TRANSISTOR; GALLIUM INDIUM PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR; SOFTWARE PACKAGE CAD;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036070346     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011798     Document Type: Article

References (7)

1. Power HBT technologies: Present and trends
2. High-voltage GaAs power-HBT's for base-station
3. Physical compact collector-emitter breakdown model for heterojunction bipolar transistors
4. Modelling of avalanche effect in integral charge control model
5. Avalanche multiplication in a compact bipolar transistor model for circuit simulation
6. A non quasi static model of GaInP/GaAs HBT for power applications
7. Large signal modelling of self-heating, collector transit time, and RF-breakdown effects in power HBT's