Novel technique for determining bias, temperature and frequency dependence of FET characteristics

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 993-996

  Parker, Anthony E ^a   Rathmell, James G ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK ANALYZERS; ELECTRON TRAPS; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; NUMERICAL METHODS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; TRANSCONDUCTANCE;

DISPERSION EFFECT; INTERMODULATION DISTORTION; MICROWAVE FREQUENCY; SEMICONDUCTOR PARAMETER ANALYZER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0036070083     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Pulsed measurements
2. A physical model for the kink effect in InAlAs/InGaAs HEMT's
3. Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
4. Measurement and characterization of HEMT dynamics
5. Pulsed device measurements and applications
6. Relating dynamics of FET behavior to operating regions