Strategies for direct monolithic integration of AlxGa(1-x)As/InxGa(1-x)As LEDS and lasers on Ge/GeSi/Si substrates via relaxed graded GexSi(1-x) buffer layers

Materials Research Society Symposium - Proceedings

Volumn 692, Issue , 2002, Pages 513-518

  Groenert, Michael E ^a   Leitz, Christopher W ^a   Pitera, Arthur J ^a   Yang, Vicky K ^a   Lee, Harry ^a   Ram, Rajeev J ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EXPANSION;

LASER STRUCURES;

QUANTUM WELL LASERS;

EID: 0036061326     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)