Type II diode lasers based on interface recombination at 3.3 μm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4651, Issue , 2002, Pages 193-202

  Krier, Anthony ^a   Wright, Derek A ^a   Ellarby, Victoria J ^a   Sherstnev, Victor V ^a   Moiseev, Konstantin D ^a   Yakovlev, Yuri P ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Hetero interfaces; Mid infrared lasers; Photoluminescence

Indexed keywords

BAND STRUCTURE; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT POLARIZATION; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

AUGER SUPPRESSIONS;

SEMICONDUCTOR LASERS;

EID: 0036059042     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467947     Document Type: Conference Paper

References (11)

1. Quantum cascade lasers
2. Quantum cascade laser
3. 2.3 μm VCSEL in InGaAsSb/GaSb grown by MBE
4. 10-stage cascaded InAsSb quantum well laser at 3.9 μm
5. Efficient 3.3 μm light emitting diodes for the detection of methane gas
6. 0.09/GaSb grown by LPE
7. High performance uncooled InAsSbP/InGaAs photodiodes for the 1.8-3.4 μm wavelength range
8. New III-V semiconductor lasers emitting near 2.6um
9. Interface electroluminescence of confined carriers in type II broken gap p-GaInAsSb/p-InAs single heterojunctions