InP HEMT-based, cryogenic, wideband LNAs for 4-8 GHz operating at very low dc-power

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 459-462

  Mellberg, A ^a   Wadefalk, N ^a   Rorsman, N ^a   Choumas, E ^a   Stenarson, J ^a   Angelov, I ^a   Starski, P ^a   Kollberg, E ^a   Grahn, J ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYOGENICS; ELECTRIC CURRENTS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS (LNA);

BROADBAND AMPLIFIERS;

EID: 0036049069     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Cryogenic, X-band and Ka-band InP HEMT based LNAs for the deep space network
2. W-band InP wideband MMIC LNA with 30 K noise temperature
3. Ultra-low-noise, InP field effect transistor radio astronomy receivers: State-of-the-art
4. Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs
5. Accurate small-signal modeling of HFET's for millimeter-wave applications
6. FET noise model extraction methods