Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2002, Pages 209-212

  Kraus, Rainer ^a   Knoblinger, Gerhard ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); HOT CARRIERS; SIMULATORS; THERMAL NOISE; TRANSCONDUCTANCE;

CHANNEL RESISTANCE;

MOSFET DEVICES;

EID: 0036045280     PISSN: 08865930     EISSN: None     Source Type: Journal    
DOI: 10.1109/CICC.2002.1012798     Document Type: Article

References (8)

1. Microwave CMOS-device physics and design
2. MOS transistor modeling for RF IC design
3. A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design
4. A 1.5V, 1.5GHz CMOS low noise amplifier
5. RF-Noise of deep-submicron MOSFETs: Extraction and modeling
6. The equivalence of van der Ziel and BSIM4 models in modeling the induced gate noise of MOSFETs