Behavior and control of resist dissolution in the development process

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 929-935

  Takai, Yoshifumi ^a   Mulhall, James ^a   Yoshihara, Kosuke ^b   Kyoda, Hideharu ^b   Takeguch, Hirofumi ^b  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

Chemically Amplified Resists; Critical Dimension; Exposed Area Ratio; Resist Dissolution

Indexed keywords

DISSOLUTION; ELECTRONIC EQUIPMENT MANUFACTURE; LITHOGRAPHY; ORGANIC COMPOUNDS;

CRITICAL DIMENSIONS (CD); EXPOSED AREA RATIO (EAR);

PHOTORESISTS;

EID: 0036031576     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474166     Document Type: Article

References (3)

1. Eishi Shiobara, Daisuke Kawamura, Kento Matsunaga, Yasunobu Onishi, "Dependence of Resist Profile on Exposed Area Ratio," vol 4345, pp628-636, SPIE 2001.
2. Hiroko Nakamura, Tatsuhiko Ema, Kei Hayasaki, Shinichi Ito and Katsuya Okumura, "The Effect of Mixing Development Method on CD Uniformity," Microprocess and Nanotechnology '99, Digest of papers, p.156, 1999.
3. Shinichi Ito, Kei Hayasaki, Hiroko Nakamura, "Dissolution Performance of Device pattern with Low-Impact Development," vol. 4345, pp665-672, SPIE 2001.