Importance of resist transparency and development rate control in via-first dual damascene processes

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 I, Issue , 2002, Pages 586-597

  Nagahara, Seiji ^a   Fujimoto, Masashi ^a   Yamana, Mitsuharu ^a   Hashimoto, Takeo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Development rate; Dual damascene; Lithography simulation; Resist; Transparency; Via first

Indexed keywords

ANTIREFLECTION COATINGS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ETCHING;

CHEMICALLY AMPLIFIED RESISTS (CAR);

PHOTORESISTS;

EID: 0036028766     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474259     Document Type: Article

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