A novel structure MOSFET's fabricated by using SiGe selective epitaxial growth method and laser induced atomic layer doping method

Journal of the Korean Physical Society

Volumn 41, Issue 1, 2002, Pages 82-86

  Lee, Yongjae ^a   Choi, Youngshig ^a   Bea, Jichel ^b  

^a Dong Eui University   (South Korea)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Excimer laser annealing (ELA); Laser induced atomic layer doping (LI ALD); SiGe selective epitaxial growth; Ultra high vacuum chemical vapor deposition (UHVCVD); Ultra shallow source drain extension (SDE)

Indexed keywords

EID: 0036021631     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Y.H. Song, J.C. Bea, M. Oonishi, T. Honda, H. Kurino and M. Koyanagi, International Electron Device Meeting (Washinton D.C., Dec., 1999), p. 505.
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3. H. Takeuchi, W.C. Lee, P. Ranade and T.J. King, International Electron Device Meeting (Washinton DC, Dec., 1999), p. 501.
4. Sungil Chang, Sangyeon Han, Hyungcheol Shin and Jongho Lee, J. Korean Phys. Soc. 37, 897 (2000).
5. Sangyeon Han, Sung-il Chang, Hyungcheol Shin and Jongho Lee, J. Korean Phys. Soc. 40, 39 (2002).