Extraction of device model parameters in MOSFETs by combining C-V and I-V characteristics

Journal of the Korean Physical Society

Volumn 40, Issue 1, 2002, Pages 60-63

  Kim, Y C ^a   Kim, H T ^a   Cho, S D ^a   Song, S J ^a   Chi, S S ^a   Kim, H C ^a   Kim, S K ^a   Baek, K H ^a   Lim, G M ^a   Kim, D J ^a   Kim, D M ^a  

^a Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036002397     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

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2. A. Raychaudhuri, M.J. Deen, M.I.H. King and J. Kolk, Solid-State Electronics 39, 909 (1995).
3. C.L. Lon, W.K. Chim, D.D.S. Chan and Y. Pan, IEEE Trans. Electron Dev. 45, 1317 (1998).
4. C.R. Moon, Ikmo Park and H. Lim, J. Korean Phys. Soc. 35, 520 (1999).
5. N.D. Arora, D.A. Bell and A.A. Bail Solid-State Electronics 35, 1817 (1992).
6. G.M. Lim, Y.C. Kim, D.J. Kim, Y.W. Park and D.M. Kim, Electronics Lett. 36, 14, 1233 (2000).