Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1096-1101

  Yu, Kuo Hui ^a   Lin, Kun Wei ^a   Lin, Kuan Po ^a   Yen, Chih Hung ^a   Wang, Ckih Kai ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

GATES (TRANSISTOR);

EID: 0035998538     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1481862     Document Type: Article

References (11)