Ultra-shallow junction formation via GeB-ion implantation of Si

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Lu, X ^a   Shao, L ^a   Jin, J ^a   Li, Q ^a   Rusakova, I ^a   Chen, Q Y ^a   Liu, J ^a   Chu, W K ^a   Ling, P ^a  

^a University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; GERMANIUM ALLOYS; ION IMPLANTATION; ION SOURCES; RAPID THERMAL ANNEALING; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM BORON ALLOYS; RESIDUAL DEFECTS; ULTRASHALLOW JUNCTION FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0034439819     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-610-b4.5     Document Type: Conference Paper

References (6)