SCOPUS 정보 검색 플랫폼

Physica Status Solidi (B) Basic Research

Volumn 229, Issue 1, 2002, Pages 385-389

Heavily p-type doped ZnSe and ZnBeSe

(10) Kuskovsky, I L a Gu, Y a Tian, C a Neumark, G F a Guo, S P b Lin, W b Maksimov, O b Tamargo, M C b Alyoshin, A N c Belous, V M c

a Department of Earth and Environmental Sciences (United States)

b CITY COLLEGE OF NEW YORK (United States)

c ODESSA NATIONAL UNIVERSITY (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035994408 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(200201)229:1<385::AID-PSSB385>3.0.CO;2-8 Document Type: Conference Paper

Times cited : (1)

References (15)

1
- 0033703983
- (2000) J. Cryst. Growth , vol.214-215 , pp. 1029
- Itoh, S.¹ Nakano, K.² Ishibashi, A.³

2
- 0032484826
- (1998) Electron. Lett. , vol.34 , pp. 282
- Kato, E.¹ Noguchi, H.² Nagai, M.³ Okuyama, H.⁴ Kijima, S.⁵ Ishibashi, A.⁶

3
- 0342855380
- (2000) Electron. Lett. , vol.36 , pp. 44
- Strassburg, M.¹ Schultz, O.² Pohl, U.W.³ Bimberg, D.⁴ Itoh, S.⁵ Nakano, K.⁶ Ishibashi, A.⁷

4
- 21544453667
- (1992) Appl. Phys. Lett. , vol.61 , pp. 3160
- Fan, Y.¹ Han, J.² He, L.³ Saraie, J.⁴ Gunshor, R.L.⁵ Hagerott, M.⁶ Jeon, H.⁷ Nurmikko, A.V.⁸ Hua, G.C.⁹ Otsuka, N.¹⁰

5
- 0029776901
- (1996) Appl. Phys. Lett. , vol.68 , pp. 388
- Taike, A.¹ Momose, M.² Kawata, M.³ Gotoh, J.⁴ Mochizuki, K.⁵ Nakatsuka, S.⁶

6
- 0000364731
- (1997) Semicond. Sci. Technol. , vol.12 , pp. 1291
- Faschinger, W.¹ Nürnberger, J.² Kurtz, E.³ Schmitt, R.⁴ Korn, M.⁵ Schüll, K.⁶ Ehinger, M.⁷

7
- 0032606634
- (1999) J. Appl. Phys. , vol.86 , pp. 3616
- Tomiya, S.¹ Kijima, S.² Okuyama, H.³ Tsukamoto, H.⁴ Hino, T.⁵ Tamiguchi, S.⁶ Noguchi, H.⁷ Kato, E.⁸ Ishibashi, A.⁹

8
- 0001562652
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2205
- Lin, W.¹ Guo, S.P.² Tamargo, M.C.³ Kuskovsky, I.⁴ Tian, C.⁵ Neumark, G.F.⁶

9
- 0001609423
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1143
- Jung, H.D.¹ Song, C.D.² Wang, S.Q.³ Arai, K.⁴ Wu, Y.H.⁵ Zhu, Z.⁶ Yao, T.⁷ Katayama-Yoshida, H.⁸

10
- 0003977242
- Izd. Mir, Moscow and Prentice-Hall, Englewood Cliffs (NJ)
- (1981) Introduction to Semiconductor Theory , pp. 645
- Ansel'm, A.I.¹

11
- 36449005623
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2208
- Hauksson, I.S.¹ Simpson, J.² Wang, S.Y.³ Prior, K.A.⁴ Cavenett, B.C.⁵

12
- 0029237877
- (1994) Proc. SPIE , vol.2346 , pp. 159
- Neumark, G.F.¹ Radomsky, L.² Kuskovskiy, I.³

13
- 0003274110
- Wide gap II-VI compounds as electronic materials
- Ed. E. KALDIS, North-Holland Publ. Co., Amsterdam/New York
- (1982) Current Topics in Materials Science , vol.9
- Hartman, H.¹ Mach, R.² Selle, B.³

14
- 0034905835
- (2001) Phys. Rev. B , vol.63 , pp. 155205
- Kuskovsky, I.L.¹ Tian, C.² Neumark, G.F.³ Spanier, J.E.⁴ Herman, I.P.⁵ Lin, W.⁶ Guo, S.P.⁷ Tamargo, M.C.⁸

15
- 0033701518
- (2000) J. Cryst. Growth , vol.214-215 , pp. 1058
- Kuskovsky, I.¹ Tian, C.² Neumark, G.F.³ Guo, S.P.⁴ Tamargo, M.C.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.