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Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 388-390

Dependence of ZnTe-based contact structure properties on nitrogen concentration

(6) Taike, A a Momose, M a Kawata, M a Gotoh, J a Mochizuki, K a Nakatsuka, S a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRON EMISSION; EMISSION SPECTROSCOPY; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; STRUCTURE (COMPOSITION);

DONOR ACCEPTOR PAIR EMISSION; HOLE CONCENTRATION; MODULATION DOPING; ZINC SELENIDE; ZINC TELLURIDE;

OHMIC CONTACTS;

EID: 0029776901 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.116694 Document Type: Article

Times cited : (8)

References (9)

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