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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1600-1608

ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures

(5) Schultz, B D a Farrell, H H b Evans, M M R c Ludge K d Palmstrom C J a

a University of Minnesota (United States)

b Bechtel BWXT Idaho LLC (United States)

c UNIVERSITY OF WISCONSIN EAU CLAIRE (United States)

d TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; FILM GROWTH; INTERFACES (MATERIALS); IRON; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE REACTIONS; THERMAL EFFECTS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ERBIUM ARSENIDE INTERLAYERS; INTERFACIAL REACTIONS; X RAY PHOTOEMISSION SPECTRA;

HETEROJUNCTIONS;

EID: 0035982594 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1491994 Document Type: Conference Paper

Times cited : (44)

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