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Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 449-451

Properties of a Fe/GaAs(001) hybrid structure grown by molecular-beam epitaxy

(4) Chye, Y a Huard, V a White, M E a Petroff, P M a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSE PROXIMITY; FE FILMS; GAAS; GAAS(001); GROWTH METHOD; HYBRID STRUCTURE; IN-PLANE MAGNETIC ANISOTROPY; LOW-TEMPERATURE DEPOSITION; QUANTUM WELL; SQUARE HYSTERESIS LOOP; ULTRA-THIN;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; INTERFACES (MATERIALS); MAGNETIC MATERIALS; METALLIC FILMS; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

MAGNETIC ANISOTROPY;

EID: 79956003884 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1434302 Document Type: Article

Times cited : (42)

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