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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1303-1310

Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography

(2) Patsis, G P a Glezos, N a

a INSTITUTE OF MICROELECTRONICS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKING; DIFFUSION; DOSIMETRY; ELECTRON BEAM LITHOGRAPHY; GELATION; GELS; MATHEMATICAL MODELS; MOLECULAR WEIGHT DISTRIBUTION; PHOTOLITHOGRAPHY; POISSON DISTRIBUTION; PROBABILITY;

CHEMICALLY AMPLIFIED RESISTS; EXPOSURE DOSE; INHIBITION ACTIVITY; POSTEXPOSURE BAKE; PROBABILISTIC GEL FORMATION THEORY;

PHOTORESISTS;

EID: 0035982525 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1484099 Document Type: Conference Paper

Times cited : (9)

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