Lithographic properties of poly (terf-butyl methacrylate)-based block and random copolymer resists designed for 193 nm wavelength exposure tools

Chemistry of Materials

Volumn 8, Issue 9, 1996, Pages 2282-2290

  Gabor, Allen H ^a,b   Pruette, Laura C ^a   Ober, Christopher K ^a  

^a Department of Materials Science and Engineering   (United States)

^b Olin Microelectronic Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001279290     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9600135     Document Type: Article

References (31)

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