Novel cell architecture for high performance of 512-Mb DRAM with 0.12-μm design rule

Journal of the Korean Physical Society

Volumn 41, Issue 4, 2002, Pages 487-492

  Lee, Jaegoo ^a   Cho, Changhyun ^a   Lee, Juyong ^a   Kim, Minsang ^a   Lee, Jaekyu ^a   Shin, Sooho ^a   Kwak, Donghwa ^a   Koh, Kwanhyeob ^a   Jeong, Gitae ^a   Jeong, Hongsik ^a   Chung, Taeyoung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Date retention time SALFI(self aligned local field implantation); DMO(dual oxide capacitor); Gate dual space

Indexed keywords

EID: 0035981422     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (9)

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2. Hyung Soo Uh, J.K. Lee, S.H. Lee, Y.S. Ahn, H.O. Lee, S.H. Hong, J.W. Lee, K.H. Koh, G.T. Jeong, T.Y. Jeong and Kinam Kim, Symp. On VLSI Tech. (Kyoto, June, 2001), p. 27.
3. S. Ueno, T. Yamashita, H. Oda, S. Komori, Y. Inoue and T. Nishimuta, IEDM Tech. Dig. (San Francisco, Dec., 1998), p. 153.
4. Jooyoung Lee, Daewon Ha and Kinam Kim, IEEE Trans. Electron Dev. 48, 1152 (2001).
5. Jae-kyu Lee, Sang-Hyeon Lee, Daewon Ha and Kinam Kim, European Solid State Device Research Conference (Cork, Sep., 2000), p. 284.
6. Shuichi Ueno, Yasuo Inoue and Masahide Inuishi, IEDM Tech. Dig. (Washington DC, Dec., 1999), p. 37.
7. Jaegoo Lee, Sanghyeon Lee, Yongseok Ahn, Jaekyu Lee, Daewon Ha, Gwanhyeob Koh, Hongsik Jeong, Taeyoung Chang and Kinam Kim, J. Korean Phys. Soc. 39, 106 (2001).
8. Jaegoo Lee, Jinwoo Lee, Kwanhyeob Koh, Kyuhyun Lee, Changhyun Cho, Gitae Jeong, Hongsik Jeong, Taeyoung Chang and Kinam Kim, European Solid State Device Research Conference (Nuremberg, Sep., 2001), p. 127.
9. Yoonsoo Chun, J.S. Park, S.M. Jang, S.G. Park, Y.S. Hwang, H.S. Jeong and Kinam Kim, J. Korean Phys. Soc. 40, 624 (2002).