Electrical modelling of a pressure sensor MOSFET

Sensors and Actuators, A: Physical

Volumn 94, Issue 1-2, 2001, Pages 53-58

  Sallese, J M ^a   Grabinski, W ^b   Meyer, V ^a   Bassin, C ^a   Fazan, P ^a  

^a EPFL   (Switzerland)

^b MOTOROLA INC   (United States)

Author keywords

CMOS; Gate capacitance; Pressure sensor

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; PARAMETER ESTIMATION; PARTIAL PRESSURE SENSORS; TRANSCONDUCTANCE;

GATE CAPACITANCE;

MOSFET DEVICES;

EID: 0035980431     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00693-8     Document Type: Article

References (9)

1. Transition from capacitive to the FET-type pressure sensor
2. Semiconductor pressure sensor based on FET structure
3. Surface micromachining technology applied to the fabrication to the fabrication of a FrET pressure sensor
4. Pressure-sensitive insulated gate field-effect transistor (PSIGFET)
5. The Pressfet: An integrated electret-MOSFET-based pressure sensor
6. Micromachined electro-mechanically tunable capacitors and their applications to RF IC's