Integrated InAs/GaSb 3D magnetic field sensors for "the intelligent tire"

Sensors and Actuators, A: Physical

Volumn 94, Issue 1-2, 2001, Pages 59-63

  Yilmazoglu, O ^a   Brandt, M ^a   Sigmund, J ^a   Genc, E ^a   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

3D Hall device; Hall sensor; InAs quantum well; Magnetic field sensor; Position sensor

Indexed keywords

DEFORMATION; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; ELECTRON MOBILITY; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

MAGNETIC FIELD SENSORS;

CHEMICAL SENSORS;

EID: 0035980353     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00691-4     Document Type: Article

References (10)

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6. Characterisation of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE
7. High-performance InAs quantum well Hall sensors on germanium substrates
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