High-performance InAs quantum well Hall sensors on germanium substrates

Electronics Letters

Volumn 34, Issue 23, 1998, Pages 2273-2274

  Behet, M ^a   De Boeck, J ^a   Borghs, G ^a   Mijlemans, P ^b  

^a IMEC   (Belgium)

^b Union Miniere Research   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMODYNAMIC STABILITY;

HALL SENSORS; INDIUM ARSENIDE;

HALL EFFECT DEVICES;

EID: 0032204138     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981540     Document Type: Article

References (3)

1. 0.8Sb heterostructures for magnetic sensing applications', Semicond. Sci. Technol., 1998, 13, pp. 428-432
2. KUZE, N., NAGASE, K., MURAMATSU, S., MIYA, S., IWABUCHI, T., ICHII, A., and SHIBASAKI, I.: 'InAs deep quantum well structures and their application to Hall elements', J. Cryst. Growth, 1995, 150, pp. 1307-1312
3. D'HONDT, M., YU, Z.-Q., DEPRETER, B., SYS, C., MOERMAN, I., DEMEESTER, P., and MIJLEMANS, P.: 'High quality InGaAs/AlGaAs lasers grown on Ge substrates'. 9th Int. Conf. on MOVPE, 1998, La Jolla, California, to be published in J. Cryst. Growth