Highly sensitive AlGaAs/GaAs position sensors for measurement of tyre tread deformation

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 760-762

  Brandt, M ^a   Bachmann, V ^a   Vogt, A ^a   Fach, M ^a   Mayer, K ^a   Breuer, B ^a   Hartnagel, H L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

TYRE TREAD DEFORMATION MEASUREMENT;

SENSORS;

EID: 0032047043     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980520     Document Type: Article

References (7)

1. LEPKOWSKI, T., SHADE, G., KWOK, S., FENG, M., DICKENS, L., LANDE, D., and SCHOENDUBE, B.: 'A GaAs integrated Hall sensor/amplifier', IEEE Trans. Electron. Devices, 1986, ED-7, (4), pp. 222-224
2. TAKOV, T., ROUMENIN, C., TZENEVA, T., and MINKOV, D.: 'Highly linear and low offset n-GaAs Hall sensor', Trans. South Afr. Inst. Electr. Eng., March 1997, pp. 28-31
3. DEL MEDICO, S., BENYATTOU, T., GUILLOT, G., TARDY, J., and CHOVET, A.: 'InGaAs-2DEG Hall devices with high magnetic sensitivity'. Proc. Eurosensors X, Belgium, 1996, pp. 135-138
4. KYBURZ, R., SCHMID, J., POPOVIC, R., and MELCHIOR, H.: 'Highly sensitive InGaAs/InP Hall sensors grown by MOVPE', IEEE Trans. Electron Devices, 1994, 41, (3), pp. 315-320
5. WANG, H., ZENG, Y., FAN, T., ZHOU, H., PAN, D., DONG, J., and KONG, M.: 'Characterisation of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE', J. Cryst. Growth, 1997, 197, pp. 658-660
6. STÖCKER, J., KIRSCHBAUM, A., ALLER, L. BREUER, B., GLESNER, M., and HARTNAGEL, H.L.: 'The "Intelligent Tyre" - Recent results of an interdisciplinary research cooperation', ATZ Automobiltechnische Zeitschrift, 1995, 5, (97), pp. 824-832
7. POBANZ, C., and ITOH, T.: 'Quasi-optical microwave circuits for wireless applications', Microw. J., January 1995, pp. 64-85