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Solid State Communications

Volumn 113, Issue 7, 2000, Pages 415-418

Photoluminescence from transmuted impurities in neutron-transmutation-doped semi-insulating GaP

(3) Kuriyama, K a Ohbora, K a Okada, M b

a HOSEI UNIVERSITY (Japan)

b KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SULFUR;

ELECTRICAL ACTIVATION; GALLIUM PHOSPHIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033877096 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(99)00499-8 Document Type: Article

Times cited : (7)

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