Coulomb blockade observed in a Ge nanocrystalline thin film from a macroscopic-size device and its enhancement by photo-oxidation

Solid State Communications

Volumn 120, Issue 2-3, 2001, Pages 113-117

  Banerjee, Souri ^a,b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. nanostructures; A. thin films; D. tunneling

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FILM PREPARATION; NANOSTRUCTURED MATERIALS; PHOTOOXIDATION; SUBSTRATES;

NANOFILMS;

THIN FILMS;

EID: 0035955244     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00331-3     Document Type: Article

References (15)