Atomic wire oxidation of H-terminated Si(100)-(2 × 1): Domino reaction via oxidation and H migration

Physical Review Letters

Volumn 86, Issue 13, 2001, Pages 2842-2845

  Kato, Koichi ^a   Kajiyama, Hiroshi ^b   Heike, Seiji ^b   Hashizume, Tomihiro ^b   Uda, Tsuyoshi ^c  

^a TOSHIBA CORPORATION   (Japan)

^b HITACHI LTD   (Japan)

^c JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; HYDROGEN; HYDROGEN BONDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

ATOMIC WIRE OXIDATION; HYDROGEN MIGRATION;

OXIDATION;

EID: 0035952938     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.2842     Document Type: Article

References (16)