Quantitative depth profiles of vacancy cluster defects produced by MeV ion implantation in Si: Species and dose dependence

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages B9.4.1-B9.4.6

  Kalyanaraman, R ^a   Haynes, T E ^a   Jacobson, D C ^b   Gossmann, H J ^b   Rafferty, C S ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85009932324     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/PROC-610-B9.4     Document Type: Article

References (6)